NCP5006SNT1 データシートの表示（PDF） - ON Semiconductor
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NCP5006SNT1 Datasheet PDF : 24 Pages
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NCP5006
ANALOG SECTION (Typical values are referenced to TA = +25°C, Min & Max values are referenced −25°C to +85°C ambient
temperature, unless otherwise noted.)
Rating
Pin
Symbol
Min
Typ Max Unit
High Level Input Voltage
Low Level Input Voltage
4
EN
1.3
−
−
V
−
−
0.4
V
EN Pull Down Resistor
Feedback Voltage Threshold
4
REN
−
100
−
kW
3
FB
185
200
225
mV
Output Current Stabilization Time Delay following a DC/DC Start−up,
@ Vbat = 3.60 V, L = 22 mH, Iout = 20 mA
1
Ioutdly
−
100
−
ms
Internal Switch ON Resistor @ Tamb = +25°C
1
QRDSON
−
1.7
−
W
5. The overall tolerance depends upon the accuracy of the external resistor.
ESD PROTECTION
The NCP5006 includes silicon devices to protect the pins
against the ESD spikes voltages. To cope with the different
ESD voltages developed in the applications, the built−in
structures have been designed to handle "2.0 kVin Human
Body Model (HBM) and "200 V in Machine Model (MM)
on each pin.
DC/DC OPERATION
The DC/DC converter is designed to supply a constant
current to the external load, the circuit being powered from
a standard battery supply. Since the regulation is made by
means of a current loop, the output voltage will varies
depending upon the dynamic impedance presented by the
load.
Considering high intensity LED, the output voltage can
range from a low 6.40 V (two LED in series biased with a
low current), up to 21 V, the voltage compliance the chip
can sustain continuously.
The basic DC/DC structure is depicted in Figure 3. With
a 28 V maximum rating voltage capability, the power
device can accommodate high voltage source without any
leakage current downgrading.
Vbat
POR
Vdsense
L1
22 mH
1
D1
Q1 Vds
LOGIC
CONTROL
TIME_OUT
ZERO_CROSSING
RESET
Vdsense
+
V(Ipeak)
−
−
+
GND
R1
C2
Vref
GND
Figure 3. Basic DC/DC Converter Structure
GND
3
R2
xR
Vs
GND
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