NIF62514
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Clamped Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
(VGS = 0 Vdc, ID = 250 mAdc, TJ = 150°C) (Note 4)
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
(VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C) (Note 4)
Gate Input Current
(VGS = 5.0 Vdc, VDS = 0 Vdc)
(VGS = −5.0 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 150 mAdc)
Threshold Temperature Coefficient (Negative)
V(BR)DSS
IDSS
IGSS
VGS(th)
Static Drain−to−Source On−Resistance (Note 5)
(VGS = 10 Vdc, ID = 1.4 Adc, TJ @ 25°C)
(VGS = 10 Vdc, ID = 1.4 Adc, TJ @ 150°C) (Note 4)
Static Drain−to−Source On−Resistance (Note 5)
(VGS = 5.0 Vdc, ID = 1.4 Adc, TJ @ 25°C)
(VGS = 5.0 Vdc, ID = 1.4 Adc, TJ @ 150°C) (Note 4)
Source−Drain Forward On Voltage
(IS = 7 A, VGS = 0 V)
RDS(on)
RDS(on)
VSD
SWITCHING CHARACTERISTICS (Note 4)
Turn−on Delay Time
10% Vin to 10% ID
RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V
td(on)
Turn−on Rise Time
10% ID to 90% ID
trise
RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V
Turn−off Delay Time
90% Vin to 90% ID
RL = 4.7 W, Vin = 10 to 0 V, VDD = 12 V
td(off)
Turn−off Fall Time
90% ID to 10% ID
tfall
RL = 4.7 W, Vin = 10 to 0 V, VDD = 12 V
Slew−Rate On
RL = 4.7 W,
Vin = 0 to 10 V, VDD = 12 V
−dVDS/dton
Slew−Rate Off
RL = 4.7 W,
Vin = 10 to 0 V, VDD = 12 V
dVDS/dtoff
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Current Limit
(VGS = 5.0 Vdc)
(VGS = 5.0 Vdc, TJ = 150°C) (Note 4)
Current Limit
(VGS = 10 Vdc)
(VGS = 10 Vdc, TJ = 150°C) (Note 4)
Temperature Limit (Turn−off) (Note 4)
VGS = 5.0 Vdc
Temperature Hysteresis (Note 4)
VGS = 5.0 Vdc
Temperature Limit (Turn−off) (Note 4)
VGS = 10 Vdc
Temperature Hysteresis (Note 4)
VGS = 10 Vdc
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Electro−Static Discharge Capability
Human Body Model (HBM)
ILIM
ILIM
TLIM(off)
DTLIM(on)
TLIM(off)
DTLIM(on)
ESD
Electro−Static Discharge Capability
Machine Model (MM)
4. Not subject to production testing.
5. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
ESD
Min
42
42
−
−
−
−
1.0
−
−
−
−
−
−
−
−
−
−
−
−
6.0
3.0
7.0
4.0
150
−
150
−
4000
400
Typ
46
45
0.5
2.0
50
550
1.7
4.0
90
165
105
185
1.05
4.0
11
32
27
1.5
0.6
9.0
5.0
10.5
7.5
175
15
165
15
−
−
Max Unit
50
50
2.0
10
100
1000
Vdc
mAdc
mAdc
2.0
Vdc
−
mV/°C
mW
100
190
mW
120
210
−
V
8.0
ms
20
ms
50
ms
50
ms
2.5
ms
1.0
ms
11
Adc
8.0
13
Adc
10
200
°C
−
°C
185
°C
−
°C
−
V
−
V
http://onsemi.com
3