P2804ND5G データシートの表示（PDF） - Unspecified

部品番号

コンポーネント説明

メーカー

P2804ND5G

N-Channel & P-Channel Enhancement Mode Field Effect Transistor_Preliminary

Unspecified 

NIKO-SEM

N- & P-Channel Enhancement Mode

Field Effect Transistor_Preliminary

P2804ND5G

TO-252-5

Lead-Free

Turn-On Delay Time2

Rise Time2

Turn-Off Delay Time2

Fall Time2

td(on)

tr

td(off)

tf

N-Channel

VDS = 20V

ID ≅ 1A, VGS = 10V, RGEN = 6Ω

P-Channel

VDS = -20V

ID ≅ -1A, VGS = -10V, RGEN = 6Ω

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

2.2 4.4

6.7 13.4

7.5 15

9.7 19.4

11.8 21.3 nS

19.8 35.6

3.7 7.4

12.3 22.2

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Forward Voltage1

IF = 7A, VGS = 0V

N-Ch

VSD

IF = -5.5A, VGS = 0V

P-Ch

1.2

V

-1.2

Reverse Recovery Time

IF = 8A, dlF/dt = 100A / µS N-Ch

42

trr

nS

IF = -7A, dlF/dt = 100A / µS P-Ch

55

Reverse Recovery Charge

Qrr

1Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%.

2Independent of operating temperature.

3Pulse width limited by maximum junction temperature.

N-Ch

30

nC

P-Ch

52

REMARK: THE PRODUCT MARKED WITH “P2804ND5G”, DATE CODE or LOT #

Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.

3

Apr-18-2005

Share Link: