PBSS5140T,215 データシートの表示（PDF） - NXP Semiconductors.
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PBSS5140T,215 Datasheet PDF : 13 Pages
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NXP Semiconductors
PBSS5140T
40 V, 1 A PNP low VCEsat BISS transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
base
emitter
collector
Simplified outline Graphic symbol
3
1
2
3
1
2
006aab259
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
PBSS5140T
-
plastic surface-mounted package; 3 leads
Version
SOT23
4. Marking
Table 4. Marking codes
Type number
PBSS5140T
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code[1]
*2H
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
collector-base voltage open emitter
-
VCEO
collector-emitter voltage open base
-
VEBO
emitter-base voltage
open collector
-
IC
collector current
-
ICM
peak collector current single pulse;
-
tp ≤ 1 ms
IBM
peak base current
single pulse;
-
tp ≤ 1 ms
Max
Unit
−40
V
−40
V
−5
V
−1
A
−2
A
−1
A
PBSS5140T_4
Product data sheet
Rev. 04 — 29 July 2008
© NXP B.V. 2008. All rights reserved.
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