PBSS5140T,215 データシートの表示（PDF） - NXP Semiconductors.
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PBSS5140T,215 Datasheet PDF : 13 Pages
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NXP Semiconductors
PBSS5140T
40 V, 1 A PNP low VCEsat BISS transistor
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Ptot
total power dissipation Tamb ≤ 25 °C
[1] -
[2] -
Tj
junction temperature
-
Tamb
ambient temperature
−65
Tstg
storage temperature
−65
Max
Unit
300
mW
450
mW
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
1
Ptot
(W)
0.75
006aab308
0.5
(1)
(2)
0.25
0
−75
−25
25
75
(1) FR4 PCB, mounting pad for collector 1 cm2
(2) FR4 PCB, standard footprint
Fig 1. Power derating curves
125
175
Tamb (°C)
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
Min Typ Max Unit
[1] -
-
417 K/W
[2] -
-
278 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
PBSS5140T_4
Product data sheet
Rev. 04 — 29 July 2008
© NXP B.V. 2008. All rights reserved.
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