PBSS5140T,215 データシートの表示（PDF） - NXP Semiconductors.
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PBSS5140T,215 Datasheet PDF : 13 Pages
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NXP Semiconductors
PBSS5140T
40 V, 1 A PNP low VCEsat BISS transistor
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
ICBO
collector-base cut-off VCB = −40 V; IE = 0 A
current
VCB = −40 V; IE = 0 A;
Tj = 150 °C
ICEO
collector-emitter
cut-off current
VCE = −30 V; IB = 0 A
-
-
−100 nA
-
-
−50 µA
-
-
−100 nA
IEBO
emitter-base cut-off VEB = −5 V; IC = 0 A
current
-
-
−100 nA
hFE
VCEsat
RCEsat
DC current gain
VCE = −5 V; IC = −1 mA
300 -
-
VCE = −5 V; IC = −100 mA
300 -
800
VCE = −5 V; IC = −500 mA [1] 250 -
-
VCE = −5 V; IC = −1 A
[1] 160 -
-
collector-emitter
IC = −100 mA; IB = −1 mA
-
-
−200 mV
saturation voltage
IC = −500 mA; IB = −50 mA [1] -
-
−250 mV
IC = −1 A; IB = −100 mA
[1] -
-
−500 mV
collector-emitter
IC = −500 mA; IB = −50 mA [1] -
saturation resistance
300 < 500 mΩ
VBEsat
base-emitter
IC = −1 A; IB = −50 mA
[1] -
-
−1.1 V
saturation voltage
VBEon
base-emitter turn-on VCE = −5 V; IC = −1 A
voltage
-
-
−1 V
td
delay time
tr
rise time
ton
turn-on time
VCC = −10 V; IC = −0.5 A;
IBon = −25 mA;
IBoff = 25 mA
-
10 -
ns
-
31 -
ns
-
41 -
ns
ts
storage time
-
195 -
ns
tf
fall time
-
65 -
ns
toff
turn-off time
-
260 -
ns
fT
transition frequency VCE = −10 V; IC = −50 mA;
150 -
-
MHz
f = 100 MHz
Cc
collector capacitance VCB = −10 V; IE = ie = 0 A;
-
-
12 pF
f = 1 MHz
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
PBSS5140T_4
Product data sheet
Rev. 04 — 29 July 2008
© NXP B.V. 2008. All rights reserved.
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