RA20H8087M(2006) データシートの表示（PDF） - MITSUBISHI ELECTRIC

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RA20H8087M
(Rev.:2006)

RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO

MITSUBISHI ELECTRIC  

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

MITSUBISHI RF POWER MODULE

RoHS COMPLIANCE RA20H8087M

Output Power Control:

Depending on linearity, the following two methods are recommended to control the output power:

a) Non-linear FM modulation:

By the gate voltage (VGG).

When the gate voltage is close to zero, the RF input signal is attenuated up to 60 dB and only a small leakage

current flows from the battery into the drain.

Around VGG=4V, the output power and drain current increases substantially.

Around VGG=4.5V (typical) to VGG=5V (maximum), the nominal output power becomes available.

b) Linear AM modulation:

By RF input power Pin.

The gate voltage is used to set the drain’s quiescent current for the required linearity.

Oscillation:

To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and

drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.

When an amplifier circuit around this module shows oscillation, the following may be checked:

a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?

b) Is the load impedance ZL=50Ω?

c) Is the source impedance ZG=50Ω?

Frequent on/off switching:

In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips

and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally

induced mechanical stress.

Quality:

Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions

exceeding those of mobile radios.

This module technology results from more than 20 years of experience, field proven in tens of millions of mobile

radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout,

which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures

are found.

Keep safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there

is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property

damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as

(i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or

mishap.

RA20H8087M

MITSUBISHI ELECTRIC

9/10

13 Jan 2006

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