RJP4301APP データシートの表示（PDF） - Renesas Electronics

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RJP4301APP

Nch IGBT for Strobe Flash

Renesas Electronics 

RJP4301APP

Electrical Characteristics

Parameter

Collector-emitter breakdown voltage

Collector-emitter leakage current

Gate-emitter leakage current

Gate-emitter threshold voltage

Collector-emitter saturation voltage

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Symbol

V(BR)CES

ICES

IGES

VGE(th)

VCE(sat)

Cies

Coes

Cres

td(on)

tr

td(off)

tf

Min.

430

—

—

3.0

—

—

—

—

—

—

—

—

Typ.

—

—

—

—

4.0

1150

125

14

0.01

0.06

0.15

0.2

Max.

—

1

±0.1

5.5

10

—

—

—

—

—

—

—

Unit

V

μA

μA

V

V

pF

pF

pF

μs

μs

μs

μs

(Tj = 25°C)

Test conditions

IC = 100 μA, VGE = 0 V

VCE = 430 V, VGE = 0 V

VGE = ±33 V, VCE = 0 V

VCE = 10 V, IC = 1 mA

IC = 200 A, VGE = 26 V

VCE = 25 V

VGS = 0

f = 1 MHz

ID = 200 A

VGS = 26 V

VCC = 300 V

RG = 25 Ω

Performance Curves

Maximum Pulse Collector Current

240

CM = 1500 μF

Tc ≤ 70°C

200 RG = 30 Ω

160

120

80

40

0

0

10

20

30

40

Gate-Emitter Voltage VGE (V)

REJ03G1709-0300 Rev.3.00 Oct 14, 2009

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