RMBA09501 データシートの表示（PDF） - Fairchild Semiconductor

部品番号

コンポーネント説明

メーカー

RMBA09501

Cellular 2 Watt Linear GaAs MMIC Power Amplifier

Fairchild Semiconductor 

May 2004

RMBA09501

Cellular 2 Watt Linear GaAs MMIC Power Amplifier

General Description

The RMBA09501 is a highly linear Power Amplifier. The

two stage circuit uses our pHEMT process. It is designed

for use as a driver stage for Cellular base stations, or as the

output stage for Micro- and Pico-Cell base stations. The

amplifier has been optimized for high linearity requirements

for CDMA operation.

Features

• 2 Watt Linear output power at 36dBc ACPR1 for CDMA

operation

• Small Signal Gain of > 30dB

• Small outline SMD package

Device

Absolute Ratings

Symbol

VDD

VGS

PRF

TC

TS

Parameter

Drain Supply Voltage1

Gate Supply Voltage

RF Input Power (from 50Ω source)

Case Operating Temperature

Storage Temperature

Note:

1. Only under quiescent conditions—no RF applied.

Min

Max

Units

+10

V

-5

V

+5

dBm

-30

+85

°C

-40

+100

°C

©2004 Fairchild Semiconductor Corporation

RMBA09501 Rev. C

Share Link: