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部品番号
コンポーネント説明
RMLV0408EGSA-4S2 データシートの表示(PDF) - Renesas Electronics
部品番号
コンポーネント説明
メーカー
RMLV0408EGSA-4S2
4Mb Advanced LPSRAM (512k word × 8bit)
Renesas Electronics
RMLV0408EGSA-4S2 Datasheet PDF : 12 Pages
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RMLV0408E Series
Timing Waveforms
Read Cycle
Preliminary
A
0~18
CS#
WE#
V
IH
WE# = “H” level
OE#
I/O
0~7
t
RC
Valid address
t
AA
t
ACS
t
*12,13
CLZ
t
*11,12,13
CHZ
t
OE
t
OLZ
*12,13
High impedance
t
*11,12,13
OHZ
t
OH
Valid Data
Note
11. t
CHZ
and t
OHZ
are defined as the time when the I/O pins enter a high-impedance state and are not referred to
the I/O levels.
12. This parameter is sampled and not 100% tested.
13. At any given temperature and voltage condition, t
CHZ
max is less than t
CLZ
min, and t
OHZ
max is less than t
OLZ
min, for any device.
R10DS0217EJ0001 Rev.0.01
2013.09.10
Page 6 of
10
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