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RMLV0408EGSA-4S2 データシートの表示(PDF) - Renesas Electronics
部品番号
コンポーネント説明
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RMLV0408EGSA-4S2
4Mb Advanced LPSRAM (512k word × 8bit)
Renesas Electronics
RMLV0408EGSA-4S2 Datasheet PDF : 12 Pages
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RMLV0408E Series
Write Cycle (3) (CS# CLOCK)
A
0~18
CS#
t
WC
Valid address
t
AW
t
AS
t
CW
t
WR
WE#
t
WP
*22
OE#
V
IH
OE# = “H” level
I/O
0~7
t
DW
t
DH
Valid Data
Note
22. t
WP
is the interval between write start and write end.
A write starts when both of CS# and WE# become active.
A write is performed during the overlap of a low CS# and a low WE#.
A write ends when any of CS# or WE# becomes inactive.
Preliminary
R10DS0217EJ0001 Rev.0.01
2013.09.10
Page 9 of
10
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