SZM-3166Z-EVB1 データシートの表示（PDF） - Sirenza Microdevices => RFMD
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SZM-3166Z-EVB1 Datasheet PDF : 9 Pages
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Preliminary
SZM-3166Z 3.3-3.6GHz 2W Power Amp
Typical Performance 3.3-3.6GHz App Circuit (Vcc=5.2V, Icq=800mA, * 802.11g 54Mb/s 64QAM)
Parameter
Units
3.3GHz
3.4GHz
3.5GHz
3.6GHz
3.7GHz
3.8GHz
Gain @ Pout=26dBm
dB
35
35
35
35
33
31.5
P1dB
dBm
34
34.5
35
34.5
34
33
% EVM @ Pout = 27dBm*
%
2.7
2.5
2.5
2.6
3.1
4
Current @ Pout 2.5% EVM*
mA
930
930
920
893
910
885
Input Return Loss
dB
14
15
15.5
17
18.5
15.5
Output Return Loss
dB
9
10
10
9
8
7
Absolute Maximum Ratings
Parameters
Value
Unit
VC3 Collector Bias Current (IVC3)
VC2 Collector Bias Current (IVC2)
VC1 Collector Bias Current (IVC1)
**Device Voltage (VD)
Power Dissipation
1500
mA
600
mA
300
mA
9.0
V
6
W
Operating Lead Temperature (TL)
-40 to +85
*Max RF output Power for 50 ohm contin-
uous long term operation
30
ºC
dBm
Max RF Input Power for 50 ohm output
load
29
dBm
Max RF Input Power for 10:1 VSWR out-
put load
5
dBm
Max Storage Temperature
+150
ºC
Operating Junction Temperature (TJ)
ESD Human Body Model
+150
ºC
Class 1C
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continuous operation
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias conditions should also satisfy the following expression:
IcqVcc < (TJ - TL) / RTH’ j-l
Note: Icq in this equation is for the stage with the highest current
* With specified application circuit.
** No RF Drive
Caution: ESD Sensitive
Appropriate precaution in handling, packaging
and testing devices must be observed.
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-105462 Rev C
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