SCM69C433TQ15R データシートの表示（PDF） - Motorola => Freescale
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SCM69C433TQ15R Datasheet PDF : 24 Pages
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Freescale Semiconductor, Inc.
ABSOLUTE MAXIMUM RATINGS (See Note 1)
Rating
Symbol
Value
Unit
Supply Voltage (see Note 2)
Voltage Relative to VSS (see Note 2)
Output Current per Pin
Package Power Dissipation (see Note 3)
Temperature Under Bias (see Note 3)
Commercial
Industrial
VDD
Vin
Iout
PD
Tbias
4.6
V
–0.5 to VDD + 3 V
V
±20
mA
—
W
°C
–10 to 85
–40 to 85
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maxi-
mum rated voltages to this high–impedance
circuit.
Operating Temperature
Commercial
TA
0 to 70
°C
Industrial
–40 to 85
INC. Storage Temperature
Tstg
–55 to 125
°C
, NOTES:
OR 1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
CT exceeded. Functional operation should be restricted to RECOMMENDED OPER-
U ATING CONDITIONS. Exposure to higher than recommended voltages for extended
ND periods of time could affect device reliability.
ICO 2. All voltages are referenced to VSS.
3. Power dissipation capability will be dependent upon package characteristics and use
EM environment. See Package Thermal Characteristics.
ALE S DC OPERATING CONDITIONS AND CHARACTERISTICS
SC (VDD = 3.3 V ±5%, TJ < 120°C, Unless Otherwise Noted)
FREE RECOMMENDED OPERATING CONDITIONS (Voltages Referenced to VSS = 0 V)
BY Parameter
Symbol
Min
Typ
ED Power Supply Voltage
HIV Operating Temperature (Junction)
ARC Input Low Voltage
VDD
TJ
VIL
3.1
3.3
—
—
–0.5*
0
Max
3.5
120
0.8
Unit
V
°C
V
Input High Voltage
v * VIL (min) = –3.0 V ac (pulse width 20 ns).
VIH
2.2
3
5.5
V
DC CHARACTERISTICS AND SUPPLY CURRENTS
Parameter
Active Power Supply Current
v v Input Leakage Current (0 V Vin VDD)
v v Output Leakage Current (0 V Vin VDD)
Output Low Voltage (IOL = 8 mA)
Output High Voltage (IOH = –4 mA)
Symbol
Min
Max
Unit
IDDA
—
300
mA
Ilkg(I)
—
±1
µA
Ilkg(O)
—
±1
µA
VOL
—
0.4
V
VOH
2.4
—
V
PACKAGE THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Thermal Resistance Junction to Ambient (200 lfpm, 4 Layer Board) (see Note 2)
RθJA
36
°C/W
Thermal Resistance Junction to Board (Bottom) (see Note 3)
RθJB
19
°C/W
Thermal Resistance Junction to Case (Top) (see Note 4)
RθJC
8
°C/W
NOTES:
1. RAM junction temperature is a function of on–chip power dissipation, package thermal impedance, mounting site temperature, and
mounting site thermal impedance.
2. Per SEMI G38–87.
3. Indicates the average thermal impedance between the die and the mounting surface.
4. Indicates the average thermal impedance between the die and the case top surface. Measured via the cold plate method (MIL SPEC–883
Method 1012.1).
MCM69C433•SCM69C433
4
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA FAST SRAM
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