SPU30N03S2L-10 データシートの表示（PDF） - Infineon Technologies
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SPU30N03S2L-10 Datasheet PDF : 8 Pages
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Preliminary data
SPU30N03S2L-10
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 2)
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
RthJA
-
-
1.8 K/W
-
-
100
-
-
75
-
-
50
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS 30
-
-
VGS=0V, ID=1mA
Gate threshold voltage, VGS = VDS
ID =50µA
Zero gate voltage drain current
VDS=30V, VGS=0V, Tj=25°C
VDS=30V, VGS=0V, Tj=125°C
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=4.5V, ID=30A
Drain-source on-state resistance
VGS(th)
1.2
1,6
2
IDSS
IGSS
- 0.01 1
-
10 100
-
1 100
RDS(on)
- 11.6 14.6
RDS(on)
-
8.1 10
VGS=10V, ID=30A
Unit
V
µA
nA
m
1Current limited by bondwire; with a RthJC = 1.8 K/W the chip is able to carry ID = 64A
and calculated with max. source pin temperature of 85°C.
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2002-02-11
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