SPU02N60 データシートの表示（PDF） - Siemens AG
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SPU02N60 Datasheet PDF : 9 Pages
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SIPMOS® Power Transistor
• N-Channel
• Enhancement mode
• Avalanche rated
Preliminary data
SPD02N60
SPU02N60
Type
SPD02N60
SPU02N60
VDS ID
600 V 2 A
Pin 1
G
RDS(on)
5.5 Ω
@ VGS
VGS = 10 V
Package
P-TO252
P-TO251
Pin 2
D
Pin 3
S
Ordering Code
Q67040-S4133
Q67040-S4127-A2
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C
TC = 100 °C
Pulsed drain current
IDpulse
TC = 25 °C
Avalanche energy, single pulse
EAS
ID = 2 A, VDD = 50 V, RGS = 25 Ω,
Tj = 25 °C
Gate source voltage
VGS
Power dissipation
Ptot
TC = 25 °C
Operating temperature
Tj
Storage temperature
Tstg
IEC climatic category; DIN IEC 68-1
Value
2
1.3
8
135
±20
55
-55 ... +150
-55 ... +150
55/150/56
Unit
A
mJ
V
W
°C
Semiconductor Group
1
10 / 1998
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