SPU02N60 データシートの表示（PDF） - Siemens AG

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SPU02N60

SIPMOS® Power Transistor

Siemens AG 

Preliminary data

SPD02N60

SPU02N60

Electrical Characteristics

Parameter

at Tj = 25 °C, unless otherwise specified

Thermal Characteristics

Thermal resistance, junction - case

Thermal resistance, junction - ambient

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area1)

Symbol

Values

Unit

min. typ. max.

RthJC

RthJA

RthJA

-

2.25 K/W

-

100

-

-

50

-

-

tbd

-

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID = 0.25 mA

Gate threshold voltage, VGS = VDS

ID = 1 mA

Zero gate voltage drain current

VDS = 600 V, VGS = 0 V, Tj = 25 °C

VDS = 600 V, VGS = 0 V, Tj = 150 °C

Gate-source leakage current

VGS = 20 V, VDS = 0 V

Drain-Source on-state resistance

VGS = 10 V, ID = 1.3 A

V(BR)DSS 600

-

-V

VGS(th)

2.1

3

4

IDSS

IGSS

µA

-

0.1

1

-

- 100

-

10 100 nA

RDS(on)

-

4.2 5.5 Ω

1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain

connection. PCB is vertical without blown air.

Semiconductor Group

2

10 / 1998

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