SPU02N60 データシートの表示（PDF） - Siemens AG

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SPU02N60

SIPMOS® Power Transistor

Siemens AG 

Preliminary data

SPD02N60

SPU02N60

Electrical Characteristics

Parameter

at Tj = 25 °C, unless otherwise specified

Dynamic Characteristics

Transconductance

VDS≥2*ID*RDS(on)max , ID = 1.3 A

Input capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Output capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Reverse transfer capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Turn-on delay time

VDD = 30 V, VGS = 10 V, ID = 1.5 A,

RG = 50 Ω

Rise time

VDD = 30 V, VGS = 10 V, ID = 1.5 A,

RG = 50 Ω

Turn-off delay time

VDD = 30 V, VGS = 10 V, ID = 1.5 A,

RG = 50 Ω

Fall time

VDD = 30 V, VGS = 10 V, ID = 1.5 A,

RG = 50 Ω

Symbol

Values

Unit

min. typ. max.

gfs

Ciss

Coss

Crss

td(on)

1

1.8

-S

- 350 460 pF

-

40 60

-

15 22

-

10 15 ns

tr

-

25 40

td(off)

-

35 50

tf

-

25 35

Semiconductor Group

3

10 / 1998

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