SPU02N60 データシートの表示（PDF） - Siemens AG

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SPU02N60

SIPMOS® Power Transistor

Siemens AG 

Preliminary data

SPD02N60

SPU02N60

Electrical Characteristics

Parameter

at Tj = 25 °C, unless otherwise specified

Reverse Diode

Inverse diode continuous forward current

TC = 25 °C

Inverse diode direct current,pulsed

TC = 25 °C

Inverse diode forward voltage

VGS = 0 V, IF = 4 A

Reverse recovery time

VR = 100 V, IF=IS , diF/dt = 100 A/µs

Reverse recovery charge

VR = 100 V, IF=lS , diF/dt = 100 A/µs

Symbol

Values

Unit

min. typ. max.

IS

-

-

2A

ISM

-

-

8

VSD

- 0.85 1.4 V

trr

-

300 450 ns

Qrr

-

2.3 3.45 µC

Semiconductor Group

4

10 / 1998

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