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SPU09N05 データシートの表示(PDF) - Infineon Technologies

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SPU09N05
Infineon
Infineon Technologies Infineon
SPU09N05 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
SPD 09N05
Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Dynamic Characteristics
Gate to source charge
VDD = 40 V, ID = 9.2 A
Gate to drain charge
VDD = 40 V, ID = 9.2 A
Gate charge total
VDD = 40 V, ID = 9.2 A, VGS = 0 to 10 V
Gate plateau voltage
VDD = 40 V, ID = 9.2 A
Qgs
-
Qgd
-
Qg
-
V(plateau)
-
1.3 2 nC
3.5 5.25
7
11
5.9
-V
Reverse Diode
Inverse diode continuous forward current
IS
TC = 25 ˚C
-
-
9.2 A
Inverse diode direct current,pulsed
TC = 25 ˚C
ISM
-
-
37
Inverse diode forward voltage
VGS = 0 V, IF = 18.5 A
Reverse recovery time
VR = 30 V, IF=IS , diF/dt = 100 A/µs
VSD
- 1.05 1.8 V
trr
-
50 75 ns
Reverse recovery charge
VR = 30 V, IF=lS , diF/dt = 100 A/µs
Qrr
- 0.085 0.13 µC
Data Sheet
4
06.99

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