SS8050LT1 データシートの表示（PDF） - Weitron Technology

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SS8050LT1

NPN General Purpose Transistors

Weitron Technology 

SS8050LT1

0.5

IB = 3.0mA

0.4

IB = 2.5mA

0.3

IB = 2.0mA

IB = 1.5mA

0.2

IB = 1.0mA

0.1

IB = 0.5mA

0

0.4

0.8

1.2

1.6

2.0

VCE , C OLLECTOR-EMITTER VOLTAGE (VoLTS)

FIG.1 Static Characteristic

1000

100

VCE = 1V

10

1

0.1

1

10

100

1000

IC, COLLECTOR CURRENT (mA)

FIG.2 DC Current Gain

10000

1000

VBE(sat)

100

IC = 10 IB

10

VCE = 1V

100

VCE(sat)

10

0.1

1

10

100

1000

IC , COLLECTOR CURRENT (mA)

FIG.3 Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

1

0.1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VBE, BASE- EMITTER VOLTAGE(VoLTS)

FIG.4 Base-Emitter On Voltage

1000

100

VCE = 10V

10

1

1

10

100

400

IC , COLLECTOR CURRENT

FIG.5 Current Gain Bandwidth Product

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