ST2301 データシートの表示（PDF） - STANSON TECHNOLOGY
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ST2301 Datasheet PDF : 6 Pages
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P Channel Enchancement Mode MOSFET
-2.5A
ST2301
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA -20
V
Gate Threshold Voltage
VGS(th) VDS=VGS,ID=-250uA -0.45
-1.5 V
Gate Leakage Current
IGSS VDS=0V,VGS=+8V
+100 nA
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
VDS=-30V,VGS=0V
-1
IDSS VDS=-30V,VGS=0V
-10 uA
TJ=55℃
ID(on) VDS≦-5V,VGS=-4.5V -6
A
VDS≦-5V,VGS=-2.5V -3
RDS(on) VGS=-4.5V,ID=-2.8A
0.09 0.12 Ω
VGS=-2.5V,ID=-2.0A
0.145 0.17
gfs
VDS=-5V,ID=-2.8V
6.5
S
VSD IS=-1.6A,VGS=0V
-0.8 -1.2 V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-6V,VGS=-4.5V
ID≡-2.8A
VDS=-6V,VGS=0V
F=1MHz
VDD=-6V,RL=6Ω
ID=-1A,VGEN=-4.5V
RG=6Ω
5.8 10
0.85
nC
1.7
415
223
pF
23
13 25
36 60 nS
42 70
34 60
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
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