W8NA80 データシートの表示（PDF） - STMicroelectronics
部品番号
コンポーネント説明
メーカー
W8NA80 Datasheet PDF : 6 Pages
| |||
STW8NA80 STH8NA80FI
THERMAL DATA
Rthj-case
R th j -a mb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
T O - 247
0.71
ISOWATT 218
1. 78
30
0. 1
3 00
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
P a ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
7. 2
700
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
Drain Current (VGS = 0)
Gate-body Leakage
Current (VDS = 0)
VDS = Max Rat ing
VDS = Max Rat ing
VGS = ± 30 V
Tc = 100 oC
Min.
800
Typ.
Max.
50
500
100
Unit
V
µA
µA
nA
ON (∗)
Symbo l
VGS(th)
RDS(on)
ID(o n)
P ar am et e r
Test Conditions
Gat e Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On
Resistance
VGS = 10V
ID = 4A
On State Drain Current
VDS > ID(o n) x RDS(on )ma x
VGS = 10 V
Min.
2.25
Typ.
3
1.3
Max.
3.75
1.5
Unit
V
Ω
7.2
A
DYNAMIC
Symbo l
gfs (∗)
Ciss
Coss
Crss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID = 4 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
4.5
Typ.
7.9
Max.
Unit
S
1750 2300 pF
188 245
pF
50
70
pF
2/6
Share Link: 