D7NM80(2009) データシートの表示（PDF） - STMicroelectronics

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D7NM80
(Rev.:2009)

N-channel 800 V, 0.95 Ω, 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh™ Power MOSFET

STMicroelectronics 

Electrical characteristics

STD7NM80-1, STD7NM80, STF7NM80, STP7NM80

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5.

Symbol

On/off states

Parameter

Test conditions

Min. Typ. Max. Unit

V(BR)DSS

Drain-source breakdown

voltage

IDSS

IGSS

VGS(th)

RDS(on)

Zero gate voltage drain

current (VGS = 0)

Gate body leakage current

(VDS = 0)

Gate threshold voltage

Static drain-source on

resistance

ID = 1 mA, VGS= 0

VDS = Max rating,

VDS = Max rating,Tc = 125 °C

VGS = ± 30 V

VDS= VGS, ID = 250 µA

VGS= 10 V, ID= 3.25 A

800

V

1 µA

100 µA

±100 nA

34 5V

0.95 1.05 Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

gfs(1)

Ciss

Coss

Crss

Forward transconductance

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =15 V, ID= 3.25 A

VDS =25 V, f=1 MHz, VGS=0

Rg Gate input resistance

f=1MHz Gate DC Bias=0

Test signal level=20 mV

Open drain

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD=640 V, ID = 6.5 A

VGS =10 V

(see Figure 19)

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

Min. Typ. Max. Unit

-4

-

S

620

pF

- 460 - pF

15

pF

-7

-

Ω

18

nC

-4

- nC

11

nC

4/17

Doc ID 12573 Rev 3

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