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P7NM80 データシートの表示(PDF) - STMicroelectronics

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P7NM80 Datasheet PDF : 24 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
STD7NM80, STD7NM80-1
STF7NM80, STP7NM80
Datasheet
N-channel 800 V, 0.95 Ω typ., 6.5 A MDmesh™ II Power MOSFETs in
DPAK, IPAK, TO-220FP and TO-220 packages
TAB
23
1
DPAK
TAB
3
IPAK
12
TAB
3
12
TO-220FP
3
2
1
TO-220
D(2)
G(1)
S(3)
AM01475v1_noZen_noTab
Product status
STD7NM80
STD7NM80-1
STF7NM80
STP7NM80
Features
Order codes
VDS
RDS(on)max.
STD7NM80
STD7NM80-1
STF7NM80
800 V
1.05 Ω
STP7NM80
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
ID
6.5 A
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs developed using the second
generation of MDmesh™ technology. These revolutionary Power MOSFETs
associate a vertical structure to the company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. They are therefore suitable for the most
demanding high-efficiency converters.
DS4854 - Rev 4 - August 2018
For further information contact your local STMicroelectronics sales office.
www.st.com

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