P7NM80 データシートの表示（PDF） - STMicroelectronics

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P7NM80

N-channel 800 V, 0.95 Ω typ., 6.5 A MDmesh™ II Power MOSFETs in DPAK, IPAK, TO-220FP and TO-220 packages

STMicroelectronics 

STD7NM80, STD7NM80-1, STF7NM80, STP7NM80

Electrical ratings

1

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

DPAK, IPAK,

TO-220

TO-220FP

Unit

VDS

Drain-source voltage

800

V

VGS

Gate-source voltage

±30

V

ID

Drain current (continuous) at TC = 25 °C

6.5

6.5 (1)

A

ID

Drain current (continuous) at TC = 100 °C

4

4 (1)

A

IDM (2)

Drain current (pulsed)

26

26 (1)

A

PTOT

Total dissipation at TC = 25 °C

90

25

W

VISO

Insulation withstand voltage (RMS) from all three leads to external

heat sink (t = 1 s; TC = 25 °C)

2.5

kV

Tj

Operating junction temperature range

Tstg

Storage temperature range

-55 to 150

°C

1. Limited by maximum junction temperature.

2. Pulse width limited by safe operating area.

Table 2. Thermal data

Symbol

Parameter

DPAK

Rthj-case

Thermal resistance

junction-case

1.4

Rthj-amb

Thermal resistance

junction-ambient

Rthj-pcb(1)

Thermal resistance

junction-pcb

50

1. When mounted on 1inch² FR-4 board, 2 oz Cu.

Value

IPAK

100

TO-220FP

5

TO-220

1.4

62.5

Unit

°C/W

°C/W

°C/W

Symbol

IAS

EAS

Table 3. Avalanche characteristics

Parameter

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tjmax)

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAS, VDD = 50 V)

Value

Unit

1

A

240

mJ

DS4854 - Rev 4

page 2/24

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