F7NM80 データシートの表示（PDF） - STMicroelectronics

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F7NM80

N-channel 800 V, 0.95 Ω typ., 6.5 A MDmesh™ II Power MOSFETs in DPAK, IPAK, TO-220FP and TO-220 packages

STMicroelectronics 

STD7NM80, STD7NM80-1, STF7NM80, STP7NM80

Electrical characteristics

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Test condition

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0 V

IDSS

IGSS

VGS(th)

RDS(on)

Zero gate voltage drain

current

Gate body leakage current

Gate threshold voltage

Static drain-source on-

resistance

VGS = 0 V, VDS = 800 V

VGS = 0 V, VDS = 800 V,

TC = 125 °C(1)

VDS = 0 V, VGS = ±30 V

VDS = VGS, ID = 250 µA

VGS = 10 V, ID = 3.25 A

1. Defined by design, not subject to production test.

Min.

800

3

Typ.

4

0.95

Max.

10

100

±100

5

1.05

Unit

V

µA

µA

nA

V

Ω

Table 5. Dynamic

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0 V

620

-

460

-

pF

15

Rg

Gate input resistance

f = 1 MHz open drain

-

7

-

Ω

Qg

Total gate charge

Qgs

Gate-source charge

Qgd

Gate-drain charge

VDD = 640 V, ID = 6.5 A,

18

VGS = 0 to 10 V (see Figure

17. Test circuit for gate

-

4

-

nC

charge behavior)

11

Symbol

td(on)

tr

td(off)

tf

Parameter

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Table 6. Switching times

Test condition

Min.

Typ.

Max.

Unit

VDD = 400 V, ID = 3.25 A,

20

RG = 4.7 Ω, VGS = 10 V

8

(see Figure 16. Test circuit for

-

35

-

ns

resistive load switching times

and Figure 21. Switching time

waveform)

10

Table 7. Source-drain diode

Symbol

ISD

ISDM (1)

Parameter

Source-drain current

Source-drain current (pulsed)

Test condition

Min.

Typ.

Max.

Unit

6.5

-

A

26

DS4854 - Rev 4

page 3/24

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