STPS20100 データシートの表示（PDF） - STMicroelectronics
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STPS20100 Datasheet PDF : 4 Pages
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STPS20100CT
THERMAL RESISTANCES
Symbol
Parameter
Rth (j-c) Junction to case
Per diode
Total
Rth (c) Coupling
When the diodes 1 and 2 are used simultaneously :
Tj-Tc(diode 1)=P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Value
1.6
0.9
0.15
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Per diode)
STATIC CHARACTERISTICS
Symbol
Parameter
Test Conditions
IR*
Reverse leakage current VR = VRRM Tj = 25°C
Tj = 125°C
VF** Forward voltage drop
IF = 20A
Tj = 125°C
IF = 10A
Tj = 125°C
IF = 20A
Tj = 25°C
Pulse test : * tp = 5 ms, duty cycle < 2 %
** tp = 380 µs, duty cycle < 2 %
To evaluate the conduction losses use the following equation :
P = 0.55 x IF(AV) + 0.015 x IF2(RMS)
Min. Typ. Max. Unit
150 µA
100 mA
0.85 V
0.60 0.70
0.95
Fig. 1 : Average forward power dissipation versus
average forward current. (Per diode)
Fig. 2 : Average current versus ambient
temperature. (duty cycle : 0.5) (Per diode)
PF(av)(W)
12
11
10
=0.1
=0.2
=0.5
=1
9
=0.05
8
7
6
5
T
4
3
2
1
IF(av)(A)
=tp/T
tp
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
IF(av)(A)
12
10
Rth(j-a)=Rth(j-c)
8
6
=0.5
T
4
Rth(j-a)=15 oC/W
2
=tp/T
tp
0
0
25
50
Tamb(oC)
75
100
125
2/4
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