TC1101(2002) データシートの表示（PDF） - Transcom, Inc.
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TC1101 Datasheet PDF : 6 Pages
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TRANSCOM
TC1101
Low Noise and Medium Power GaAs FETs
January 2002
FEATURES
• Low Noise Figure:
NF = 0.5 dB Typical at 12 GHz
PHOTO ENLARGEMENT
• High Associated Gain:
Ga = 12 dB Typical at 12 GHz
• High Dynamic Range:
1 dB Compression Power P-1 = 18 dBm at 12 GHz
• Breakdown Voltage: BVDGO ≥ 9 V
• Lg = 0.25 µm, Wg = 160 µm
• All-Gold Metallization for High Reliability
• 100 % DC Tested
DESCRIPTION
The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very
low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40
GHz and suitable for low noise and medium power amplifier applications including a wide range of
commercial and military applications. All devices are 100% DC tested to assure consistent quality. All
bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.
ELECTRICAL SPECIFICATIONS (TA=25 °C)
Symbol
Conditions
NF
Ga
P1dB
GL
IDSS
gm
VP
BVDGO
Rth
Noise Figure at VDS = 2 V, IDS = 10 mA, f = 12GHz
Associated Gain at VDS = 2 V, IDS = 10 mA, f = 12GHz
Output Power at 1dB Gain Compression Point , f = 12GHz
VDS = 4 V, IDS = 25 mA
Linear Power Gain, f = 12GHz
VDS = 4 V, IDS = 25 mA
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
Transconductance at VDS = 2 V, VGS = 0 V
Pinch-off Voltage at VDS = 2 V, ID = 0.32 mA
Drain-Gate Breakdown Voltage at IDGO =0.08 mA
Thermal Resistance
MIN
TYP
MAX
0.5
0.7
10
12
17
18
12
14
40
55
-1.0
9
12
90
UNIT
dB
dB
dBm
dB
mA
mS
Volts
Volts
°C/W
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
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