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TC1410NEOA データシートの表示(PDF) - TelCom Semiconductor, Inc

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TC1410NEOA
TELCOM
TelCom Semiconductor, Inc TELCOM
TC1410NEOA Datasheet PDF : 5 Pages
1 2 3 4 5
0.5A HIGH-SPEED MOSFET DRIVERS
TYPICAL CHARACTERISTICS (Cont.)
Rise Time vs. Supply Voltage
CLOAD = 500pF
100
80
60
TA = 85°C
40
TA = 25°C
20
TA = –40°C
0
4
6
8
10
12
14
16
VDD (VOLTS)
TD1 Propagation Delay vs. Supply Voltage
CLOAD = 500pF
100
80
60
TA = 85°C
TA = 25°C
40
TA = –40°C
20
0
4
6
8
10
12
14
16
VDD (VOLTS)
Rise and Fall Times vs. Capacitive Load
TA = 25°C, VDD = 16V
100
TRISE
80
TFALL
60
40
20
0
0
500 1000 1500 2000 2500 3000 3500
CLOAD (pF)
TELCOM SEMICONDUCTOR, INC.
1
TC1410
TC1410N
Fall Time vs. Supply Voltage
2
CLOAD = 500pF
100
80
60
TA = 85°C
3
40
TA = 25°C
20
TA = –40°C
0
4
6
8
10
12
14
16
VDD (VOLTS)
4
TD2 Propagation Delay vs. Supply Voltage
CLOAD = 500pF
100
80
60
TA = 85°C
TA = 25°C
5
40
20
TA = –40°C
0
4
6
8
10
12
14
16
VDD (VOLTS)
6
Propagation Delays vs. Capacitive Load
TA = 25°C, VDD = 16V
45
TD2
41
37
TD1
7
33
29
25
0
500 1000 1500 2000 2500 3000 3500
CLOAD (pF)
8
4-187

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