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TK100F06K3 データシートの表示(PDF) - Toshiba
部品番号
コンポーネント説明
メーカー
TK100F06K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV)
Toshiba
TK100F06K3 Datasheet PDF : 7 Pages
1
2
3
4
5
6
7
R
DS (ON)
−
Tc
10
Common source
VGS
=
10 V
Pulse Test
8
100 A
6
ID
=
25,50 A
4
2
0
−
80
−
40 0
40 80 120 160 200
Case temperature Tc (°C)
TK100F06K3
I
DR
−
V
DS
1000
100
10
1
0.1
0
10
5
3
VGS
=
0
1
Common source
Tc
=
25°C
Pulse Test
−
0.3
−
0.6
−
0.9
−
1.2
−
1.5
Drain-source voltage VDS (V)
100000
Capacitance – V
DS
10000
Ciss
1000
Common source
VGS
=
0 V
f =1MHz
Tc
=
25°C
100
0.1
1
10
Drain-source voltage VDS (V)
Coss
Crss
100
V
th
−
Tc
5
Common source
VDS
=
10 V
ID
=
1mA
4
Pulse Test
3
2
1
0
−
80
−
40
0
40
80 120 160 200
Case temperature Tc (°C)
P
D
−
Tc
250
200
150
100
50
0
0
40
80
120
160
200
Case temperature Tc (°C)
Dynamic input / output
characteristics
80
16
Common source
70
ID
=
100 A
Tc
=
25°C
14
Pulse Test
60
12
24
50
VDS
12
10
VDD
=
48V
40
8
30
6
VGS
20
4
10
2
0
0
0 20 40 60 80 100 120 140 160
Total gate charge Qg (nC)
5
2009-04-17
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