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K12A60U(2013) データシートの表示(PDF) - Toshiba
部品番号
コンポーネント説明
メーカー
K12A60U
(Rev.:2013)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ )
Toshiba
K12A60U Datasheet PDF : 6 Pages
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2
3
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5
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TK12A60U
r
th
– t
w
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single pulse
0.001
10
μ
100
μ
PDM
t
T
Duty
=
t/T
Rth
(ch-c)
=
3.57°C/W
1m
10 m
100 m
1
10
Pulse width tw (s)
Safe operating area
100
ID max (Pulse)
*
ID max (Continuous)
10
100
μ
s
*
1 ms
*
1
DC operation
Tc
=
25°C
0.1
*
Single nonrepetitive
pulse Tc
=
25°C
0.01
Curves must be derated
linearly with increase in
temperature.
0.001
0.1
1
10
VDSS max
100
1000
Drain
−
source voltage V
DS
(V)
E
AS
– T
ch
100
80
60
40
20
0
25
50
75
100
125
150
Channel temperature (initial) T
ch
(°C)
15 V
−
15 V
B
VDSS
I
AR
V
DD
V
DS
TEST CIRCUIT
WAVEFORM
R
G
=
25
Ω
V
DD
=
90 V, L
=
0.84 mH
Ε
AS
=
1
2
⋅
L
⋅
I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS
−
VDD
⎟⎟⎠⎞
5
2013-11-01
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