CAT.No.TJ 536
RATINGS
● Absolute Maximum Ratings(Tc=25℃/Unless otherwise specified)
Item
Symbol
Conditions
US4KB80R US6KB80R US8KB80R Unit
Storage Temperature
Tstg
−55〜150
℃
Operation Junction Temperature Tj
150
℃
Maximun Reverse Voltage
Average Rectified Forward Current
Peak Surge Forward Current
Current Squared Time
Dielectric Strength
VRM
Io
IFSM
IFSM1
I2t
Vdis
60Hz sine wave,
Resistance load
With heatsink
Without heatsink
60Hz sine wave, Non-repetitive 1cycle peak value,
Tj=25℃
Non−repetitive, Tj=25℃
Tj=25℃, Per diode
Terminals to cace, AC 1 minute
800
V
4
6
8
(Tc=125℃)
(Tc=116℃)
(Tc=108℃)
2.1
2.1
2.2
A
(Ta=30℃)
(Ta=30℃)
(Ta=26℃)
150
245
(tp=3ms)
175
470
(tp=1ms)
200
575
A
(tp=1ms)
93
112
166
(3ms≦t<8.3ms) (1ms≦t<8.3ms) (1ms≦t<8.3ms)
A2s
2.0
kV
Mounting Torque
TOR (Recommended torque:0.5N・m)
● Electrical Characteristics(Tc=25℃/Unless otherwise specified)
Forward Voltage
VF Pulse measurement, Per diode
Reverse Current
IR VR=800V, Pulse measurement, Per diode
MAX. 1.00
(IF=2A)
0.8
MAX. 1.00
(IF=3A)
MAX. 10
N・m
MAX. 1.00
(IF=4A)
V
μA
Thermal Resistance
θjc Junction to case, With heatsink
θjl Junction to lead, Without heatsink
MAX. 3.5
MAX. 3.0
MAX. 5
MAX. 2.8
℃/W
θja Junction to ambient, Without heatsink
MAX. 35
Type No.
US4K80R US6K80R
US8K80R
● Absolute Maximum Ratings(Tc=25℃/Unless otherwise specified)
Item
Symbol
Conditions
US10KB80R US15KB80R US30KB80R Unit
Storage Temperature
Tstg
−55〜150
℃
Operation Junction Temperature Tj
150
℃
Maximun Reverse Voltage
Average Rectified Forward Current
Peak Surge Forward Current
Current Squared Time
Dielectric Strength
VRM
Io
IFSM
IFSM1
I2t
Vdis
800
V
60Hz sine wave,
Resistance load
With heatsink
Without heatsink
10
15
30
(Tc=100℃)
(Tc=101℃)
(Tc=97℃)
2
2
2.1
A
(Ta=28℃)
(Ta=30℃)
(Ta=27℃)
60Hz sine wave, Non−repetitive 1cycle peak value,
Tj=25℃
Non-repetitive, Tj=25℃
150
245
(tp=3ms)
200
330
(tp=3ms)
350
A
1000
(tp=1ms)
Tj=25℃, Per diode
93
166
510
(3ms≦t<8.3ms) (3ms≦t<8.3ms) (1ms≦t<8.3ms)
A2s
Terminals to cace, AC 1 minute
2.0
kV
Mounting Torque
TOR (Recommended torque:0.5N・m)
●Electrical Characteristics(Tc=25℃/Unless otherwise specified)
Forward Voltage
VF Pulse measurement, Per diode
Reverse Current
IR VR=800V, Pulse measurement, Per diode
MAX. 1.10
(IF=5A)
0.8
MAX. 1.10
(IF=7.5A)
MAX. 10
N・m
MAX. 1.10
(IF=15A)
V
μA
Thermal Resistance
θjc Junction to case, With heatsink
θjl Junction to lead, Without heatsink
MAX. 2.5
MAX. 1.5
MAX. 5
MAX. 0.8
℃/W
θja Junction to ambient, Without heatsink
MAX. 35
Type No.
U10K80R U15K80R
U30K80R