VBO22-16NO8 データシートの表示（PDF） - IXYS CORPORATION
部品番号
コンポーネント説明
メーカー
VBO22-16NO8 Datasheet PDF : 2 Pages
| |||
VBO 22
30
typ.
A
25 T=150°C
20
15
10
5
IF
T=25°C
0
VF
|
11
V|
1.51.5
Fig. 1 Forward current versus
voltage drop per diode
I-I-FF-S(-MO-V-)
1.6
IFSM (A)
TVJ=45°C TVJ=150°C
380
340
3
10
2
As
1.4
TVJ=45°C
1.2
TVJ=150°C
1
0 VRRM
0.8
1/2 VRRM
0.6
1 VRRM
0.4
0
1
2
3
10
10 t[ms] 10
10
Fig. 2 Surge overload current per diode
IFSM: Crest value. t: duration
2
10
1
2
4 6 10
t [ms]
Fig. 3 ∫i2dt versus time
(1-10ms) per diode or thyristor
50
[W] PSD 25N
40
30
20
10
PVTOT
0
IFAVM
DC
sin.180°
rec.120°
rec.60°
rec.30°
20
0
[A]
0.45 -0.05
0.95
1.95
3.95
9.95
50
Tamb
T5C0
55
= RTHCA [K/W]
60
65
70
75
80
85
90
95
100
105
110
115
120
125
130
135
140
145
°C
150
100
150
[K]
Fig. 4 Power dissipation versus direct output current and ambient temperature
30
[A]
20
DC
sin.180°
rec.120°
rec.60°
rec.30°
10
I dAV
0
50 100 150 200
TC(°C)
Fig.5 Maximum forward current
at case temperature
10
8
K/W
Z thJK
Z thJC
6
4
2
Z th
0.01
0.1
1
10
t[s]
Fig. 6 Transient thermal impedance per diode or thyristor, calculated
IXYS reserves the right to change limits, test conditions and dimensions.
2-2
© 2004 IXYS All rights reserved
Share Link: 