VND7N04-1-E データシートの表示（PDF） - STMicroelectronics
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VND7N04-1-E Datasheet PDF : 18 Pages
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VND7N04, VND7N04-1, VNK7N04FM
Electrical specification
Table 5. Electrical characteristics: on
Symbol
Parameter
Test conditions
VIN(th)
RDS(on)
Input threshold voltage
VDS = Vin ID + Iin = 1 mA
Vin = 10 V ID = 3.5 A
Vin = 5 V ID = 3.5 A
Static drain-source on resistance -40 < Tj < 25 °C
Vin = 10 V ID = 3.5 A
Vin = 5 V ID = 3.5 A
Tj = 125 °C
Min.
0.8
Typ.
Max. Unit
3
V
0.14 Ω
0.28 Ω
0.28 Ω
0.56 Ω
Table 6. Electrical characteristics: dynamic
Symbol
Parameter
Test conditions
gfs (1)
Forward
transconductance
VDS = 13 V ID = 3.5 A
Coss Output capacitance
VDS = 13 V f = 1 MHz Vin = 0
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min.
2
Typ.
5
250
Max. Unit
S
500
pF
Table 7. Electrical characteristics: switching
Symbol
Parameter
Test conditions
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
(di/dt)on Turn-on current slope
Qi
Total input charge
VDD = 15 V Id = 3.5 A
Vgen = 10 V Rgen = 10 Ω
(see Figure 26)
VDD = 15 V Id = 3.5 A
Vgen = 10 V Rgen = 1000 Ω
(see Figure 26)
VDD = 15 V ID = 3.5 A
Vin = 10 V Rgen = 10 Ω
VDD = 12 V ID = 3.5 A Vin = 10 V
Min.
Typ.
50
60
130
50
140
0.4
2.5
1
50
18
Max.
150
180
300
200
500
1.1
7
4
Unit
ns
ns
ns
ns
ns
µs
µs
µs
A/µs
nC
Table 8. Electrical characteristics: source drain diode
Symbol
Parameter
Test conditions
VSD (1)
trr (2)
Qrr (2)
IRRM (2)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 3.5 A Vin = 0
ISD = 3.5 A di/dt = 100 A/µs
VDD = 30 V Tj = 25 °C
(see test circuit, Figure 28)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2. Parameters guaranteed by design/characterization
Min. Typ. Max. Unit
1.7
V
40
ns
0.2
µC
3.6
A
5/17
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