VP0808M データシートの表示（PDF） - Unspecified
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VP0808M Datasheet PDF : 4 Pages
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VP0808B/L/M, VP1008B/L/M
Typical Characteristics (25_C Unless Otherwise Noted)
Ohmic Region Characteristics
–2.0
TJ = 25_C
VGS = –10 V
–1.6
–9 V
–1.2
–8 V
–0.8
–0.4
0
0
–7 V
–6 V
–5 V
–4 V
–1
–2
–3
–4
–5
VDS – Drain-to-Source Voltage (V)
Transfer Characteristics
–0.5
TJ = –55_C
–0.4
VDS = –10 V
25_C
125_C
–0.3
–0.2
–0.1
0
0
–2
–4
–6
–8
–10
VGS – Gate-Source Voltage (V)
On-Resistance vs. Drain Current
10
8
6
4
VGS = –10 V
2
Output Characteristics for Low Gate Drive
–20
TJ = 25_C
VGS = –4.0 V
–16
–12
–3.8 V
–8
–4
0
0
–3.6 V
–3.4 V
–3.2 V
–0.4
–0.8
–1.2
–1.6 –2.0
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
7
TJ = 25_C
6
I D = 0.1 A
5
4
0.5 A
3
1.0 A
2
1
0
0
–4
–8
–12
–16 –20
VGS – Gate-Source Voltage (V)
Normalized On-Resistance
vs. Junction Temperature
2.00
VGS = –10 V
1.75 ID = 0.5 A
1.50
1.25
1.00
0.75
0
0 –0.5 –1.0 –1.5 –2.0 –2.5 –3.0
ID – Drain Current (A)
Siliconix
P-37655—Rev. B, 25-Jul-94
0.50
–50 –10
30
70
110
150
TJ – Junction Temperature (_C)
3
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