WFF2N60 データシートの表示（PDF） - Wisdom technologies
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WFF2N60 Datasheet PDF : 6 Pages
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HIGH VOLTAGE N-Channel MOSFET
Electrical Characteristics Tc=25℃ unless other wise noted
Symbol
Parameter
Test Condition Min. Typ. Max Units
Off Characteristics
BVDSS Drain-Sourse Breakdown Voltage ID=250μA，VGS=0 600 --
--
V
△BVDSS/ Breakdown Voltage Temperature
△TJ
Conficient
ID=250μA,Reference
to 25℃
--
0.4
--
V/℃
Vds=600V, Vgs=0V
--
--
1
μA
IDSS Zero Gate Voltage Drain Current
Vds=480V, Tc=125℃
10 μA
IGSSF
Gate-body leakage Current,
Forward
Vgs=+30V, Vds=0V
--
-- 100 nA
IGSSR
Gate-body leakage Current,
Reverse
Vgs=-30V, Vds=0V
--
-- -100 nA
On Characteristics
VGS(th)
RDS(on)
Date Threshold Voltage
Static Drain-Sourse
On-Resistance
Id=250uA,Vds=Vgs
Id=1A,Vgs=10V
2
--
4
V
--
--
5
Ω
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 270 350 pF
VDS=25V，VGS=0，
-- 40 50 pF
f=1.0MHz
--
5
7
pF
Switching Characteristics
Td(on)
Tr
Td(off)
Tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Sourse Charge
Gate-Drain Charge
-- 10 30 nS
VDD=300V，ID=2A
RG=25Ω (Note 3,4)
-- 25 60 nS
-- 20 50 nS
-- 25 60 nS
-- 90 11 nC
VDS=480,VGS=10V，
-- 1.6 --
nC
ID=2A (Note 3,4)
4.3 --
nC
Drain-Sourse Diode Characteristics and Maximum Ratings
IS
Maximun Continuous Drain-Sourse Diode Forward Current
--
--
2
A
ISM
Maximun Plused Drain-Sourse DiodeForwad Current
--
--
8
A
Drain-Sourse Diode Forward
VSD
Voltage
Id=2A
--
-- 1.5
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IS=2A,VGS =0V
-- 180 --
nS
diF/dt=100A/μs (Note3) -- 0.72 --
μC
*Notes 1, L=55mH, IAS=2.0A, VDD=50V, RG=25Ω, Starting TJ =25°C
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
4, Essentially Independent of Operating Temperature
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Rev.A0,August , 2010 |
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