WFP50N06 データシートの表示（PDF） - Shenzhen Winsemi Microelectronics Co., Ltd
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WFP50N06 Datasheet PDF : 7 Pages
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Features
■ RDS(on)(Max 22mΩ)@VGS=10V
■ Ultra-low Gate Charge(Typical 31nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
WFP50N06
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's trench Layout
-based process .This technology mproves the performances
Compared with standard parts form various sources.All of these
power MOSFETs are designed for applications in switching
regulators , switching convertors, motor and relay drivers ,and
drivers for high power bipolar switching transistors demanding
high speed and low gate drive power.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
ID
Continuous Drain Current(@Tc=100℃)
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
Junction and Storage Temperature
TL
Channel Temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance , Junction -to -Case
Case-to-Sink,Flat, Greased Surface
Thermal Resistance , Junction-to -Ambient
(Note1)
(Note2)
(Note1)
(Note3)
Value
60
50
38
200
± 25
480
13
5.8
130
1.3
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/℃
℃
℃
Value
Units
Min Typ Max
-
-
0.96
℃/W
-
0.5
-
℃/W
-
-
62.5
℃/W
Rev.A Jun.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
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