WFU1N60 データシートの表示（PDF） - Shenzhen Winsemi Microelectronics Co., Ltd
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WFU1N60 Datasheet PDF : 7 Pages
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Electrical Characteristics(Tc=25℃)
Characteristics
Symbol Test Condition
Gate leakage current
IGSS
VGS=±30V,VDS=0V
Gate-source breakdown voltage
V(BR)GSS IG=±10 µA,VDS=0V
Drain cut -off current
VDS=600V,VGS=0V
IDSS
VDS=480V,Tc=125℃
Drain -source breakdown voltage
Break Voltage Temperature
Coefficient
V(BR)DSS
△BVDSS/
△TJ
ID=250 µA,VGS=0V
ID=250µA,Referenced to
25℃
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
Drain -source ON resistance
RDS(ON) VGS=10V,ID=0.65A
Forward Transconductance
gfs
VDS=40V,ID=0.65A
Input capacitance
Ciss
VDS=25V,
Reverse transfer capacitance
Output capacitance
Crss
Coss
VGS=0V,
f=1MHz
Rise time
Switching time
Turn-on time
Fall time
tr
VDD=300V,
ton
ID=1.3A，
tf
RG=25Ω，
Turn-off time
toff
(Note4,5)
Total gate charge(gate-source
plus gate-drain)
VDD=480V,
Qg
VGS=10V,
Gate-source charge
Qgs
ID=1.3A
Gate-drain("miller") Charge
Qgd
(Note4,5)
WFU1N60
Min Type Max Unit
-
-
±100 nA
±30
-
-
V
-
-
10
µA
-
100
µA
600
-
-
V
-
0.5
-
V/℃
2
-
4
V
-
7.7
8.5
Ω
-
1.3
-
S
-
247
318
-
5
6.5
pF
-
23
30
-
11
26
-
33
72
ns
-
26
59
-
26
59
-
9.1
12
nC
-
1.2
-
-
4.5
-
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol Test Condition
Min
Continuous drain reverse current
IDR
-
-
Pulse drain reverse current
IDRP
-
-
Forward voltage(diode)
VDSF
IDR=1.3A,VGS=0V
-
Reverse recovery time
trr
IDR=1.3A,VGS=0V,
-
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
Type
-
-
-
163
0.85
Max
1.3
5.0
1.4
-
-
Unit
A
A
V
ns
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=92mH IAS=1.3A,VDD=50V,RG=0Ω ,Starting TJ=25℃
3.ISD≤1.3A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
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