WT-3401 データシートの表示（PDF） - Weitron Technology

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WT-3401

Surface Mount P-Channel Enhancement Mode MOSFET

Weitron Technology 

WT-3401

20

-VGS =5V

16

-VGS =10,9,8,7,6V

12

-VGS =4V

8

-VGS =3V

4

0

0 2 4 6 8 10 12

-VDS , DRAIN-TO-SOURCE VOLTAGE(V)

FIG.1. Output Characteristics

1000

800

Ciss

600

400

200

Crss

0

05

Coss

10 15 20 25 30

-VDS , DRAIN-TO-SOURCE VOLTAGE(V)

FIG.3 Capacitance

1.3

VDS =VGS

1.2

ID =-250uA

1.1

1.0

0.9

0.8

0.7

0.6

-50 -25 0 25 50 75 100 125

Tj ,JUNCTION TEMPERATURE( C)

FIG.5 Gate Threshold Variation

with Temperature

WEITRON

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WE ITR ON

25

25 C

20

Tj =125 C

15

10

5

0

0.0 0.5 1 1.5 2

-55 C

2.5 3

-VGS , GATE-TO-SOURCE VOLTAGE(V)

FIG.2 Transfer Characteristics

2.2

VGS =-10V

1.8 ID =-3A

1.4

1.0

0.6

0.2

0

-50 -25 0 25 50 75 100 125

Tj ( C)

FIG.4 On-Resistance Variation with

Temperature

1.10

ID =-250uA

1.07

1.04

1.00

0.97

0.94

0.91

-50 -25 0 25 50 75 100 125

Tj ,JUNCTION TEMPERATURE( C)

FIG.6 Breakdown Voltage Variation

with Temperature

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