ZM33164G データシートの表示（PDF） - Zetex => Diodes
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ZM33164G Datasheet PDF : 5 Pages
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ZM33164
ABSOLUTE MAXIMUM RATING
Input Supply Voltage
-1 to 12V
Power Dissipation
Offstate Output Voltage 12V
TO92
780mW
Onstate Output
Sink Current(Note 1)
Clamp diode
Forward Current(Note 1)
Internally limited
100mA
SOT223
SO8
2W(Note 2)
780mW(Note 2)
Operating junction
temperature
150°C
Operating Temperature -40 to 85°C
Storage Temperature
-65 to 150°C
TEST CONDITIONS
(Tamb=25°C for typical values, Tamb=-40 to 85°C for min/max values (Note3))
COMPARATOR
PARAMETER
SYMBOL MIN
TYP.
MAX. UNITS
Threshold Voltage
High state output (Vcc increasing)
VIH
Threshold Voltage
Low state output (Vcc decreasing)
VIL
Hysteresis
VH
OUTPUT
4.15
4.33
4.45
V
4.15
4.27
4.45
V
0.02
0.06
V
Output sink saturation:
(Vcc=4.0V, Isink=8.0mA)
(Vcc=4.0V, Isink=2.0mA)
(Vcc=1.0V, Isink=0.1mA)
Onstate output sink current
(Vcc , Output=4V)
Offstate output leakage current
(Vcc , Output=5V)
Clamp diode forward voltage
(If=10mA)
Propagation delay
(Vin 5V to 4V, Rl=10k, Tamb=25°C)
TOTAL DEVICE
VOL
Isink
10
Ioh
Vf
0.6
Td
0.46
1.0
V
0.15
0.4
V
0.25
V
20
50
mA
0.02
0.5
µA
1.2
1.5
V
2.0
µs
Operating input voltage range
Vcc
1.0 to 10
V
Quiescent input current (Vcc=5V)
Iq
175
260
µA
Note:
1. Maximum package power dissipation must be observed
2. Maximum power dissipation, for the SOT223 and SO8 packages, is calculated assuming
that the device is mounted on a PCB measuring 2 inches square.
3. Low duty cycle pulse techniques are used during test to maintain junction temperatures as
close to ambient as possible
4-95
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