ZVP4525E6TA データシートの表示（PDF） - Zetex => Diodes

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ZVP4525E6TA

250V P-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZVP4525E6

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

Gate-Source Threshold Voltage

Static Drain-Source On-State Resistance (1)

V(BR)DSS

IDSS

IGSS

VGS(th)

RDS(on)

-250

-0.8

Forward Transconductance (3)

DYNAMIC (3)

gfs

80

-285

-30

±1

-1.5

10

13

200

V

ID=-1mA, VGS=0V

-500 nA VDS=-250V, VGS=0V

±100 nA VGS=±40V, VDS=0V

-2.0 V

14

Ω

18

Ω

I =-1mA,

D

VDS=

VGS

VGS=-10V, ID=-200mA

VGS=-3.5V, ID=-100mA

mS VDS=-10V,ID=-0.15A

Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

SWITCHING(2) (3)

73

12.8

3.91

pF

VDS=-25 V, VGS=0V,

pF f=1MHz

pF

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate Drain Charge

SOURCE-DRAIN DIODE

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

1.53

3.78

17.5

7.85

2.45

.22

.45

ns

ns

ns

ns

3.45 nC

.31 nC

.63 nC

VDD =-30V, ID=-200mA

RG=50Ω, VGS=-10V

(refer to test circuit)

VDS=-25V,VGS=-10V,

ID=-200mA(refer to

test circuit)

Diode Forward Voltage (1)

VSD

0.97 V

Reverse Recovery Time (3)

trr

205 290 ns

Reverse Recovery Charge (3)

Qrr

21

29

nC

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

Tj=25°C, IS=-200mA,

VGS=0V

Tj=25°C, IF=-200mA,

di/dt= 100A/µs

ISSUE 1 - MARCH 2001

4

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