ZXM62P02E6TA データシートの表示（PDF） - Zetex => Diodes

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ZXM62P02E6TA

20V P-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXM62P02E6

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

Drain-Source Voltage

Gate- Source Voltage

Continuous Drain Current (VGS=-4.5V; TA=25°C)(b)

(VGS=-4.5V; TA=70°C)(b)

Pulsed Drain Current (c)

Continuous Source Current (Body Diode)(b)

Pulsed Source Current (Body Diode)(c)

Power Dissipation at TA=25°C (a)

Linear Derating Factor

VDSS

VGS

ID

IDM

IS

ISM

PD

Power Dissipation at TA=25°C (b)

PD

Linear Derating Factor

Operating and Storage Temperature Range

Tj:Tstg

THERMAL RESISTANCE

LIMIT

-20

± 12

-2.3

-1.7

-13

-1.9

-13

1.1

8.8

1.7

13.6

-55 to +150

UNIT

V

V

A

A

A

A

W

mW/°C

W

mW/°C

°C

PARAMETER

SYMBOL

VALUE

UNIT

Junction to Ambient (a)

Junction to Ambient (b)

RθJA

RθJA

113

°C/W

73

°C/W

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions

(b) For a device surface mounted on FR4 PCB measured at tр5 secs.

(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal

Impedance graph.

PROVISIONAL ISSUE A - JULY 1999

106

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