ZXMN6A11DN8TA(2006) データシートの表示（PDF） - Zetex => Diodes
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ZXMN6A11DN8TA Datasheet PDF : 8 Pages
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ZXMN6A11DN8
60V SO8 Dual N-channel enhancement mode MOSFET
Summary
V(BR)DSS
60
RDS(on) (⍀)
0.120 @ VGS= 10V
0.180 @ VGS= 4.5V
ID (A)
3.2
2.6
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
D1
D2
G1
G2
S1
S2
Applications
• DC-DC converters
• Power management functions
• Motor control
Ordering information
Device
ZXMN6A11DN8TA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity
per reel
500
S1
D1
G1
D1
S2
D2
G2
D2
Pin out - top view
Device marking
ZXMN
6A11D
Issue 3 - September 2006
1
© Zetex Semiconductors plc 2006
www.zetex.com
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