11N60S5 データシートの表示（PDF） - Infineon Technologies
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11N60S5 Datasheet PDF : 12 Pages
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9 Typ. gate charge
VGS = f (QGate)
parameter: ID = 11 A pulsed
SPP11N60S5
16
V
0.2 VDS max
12 0.8 VDS max
10
SPP11N60S5, SPB11N60S5
SPI11N60S5
10 Forward characteristics of body diode
IF = f (VSD)
parameter: Tj , tp = 10 µs
10 2 SPP11N60S5
A
10 1
8
6
4
2
0
0
10 20 30 40 50 nC 65
QGate
10 0
10 -1
0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
VSD
11 Avalanche SOA
IAR = f (tAR)
par.: Tj ≤ 150 °C
11
A
9
12 Avalanche energy
EAS = f (Tj)
par.: ID = 5.5 A, VDD = 50 V
350
mJ
8
250
7
200
6
5
Tj (START)=25°C
4
3
Tj (START) =125°C
2
1
150
100
50
0
10
-3
10 -2
10 -1
10 0
10 1
10 2
Rev. 2.1
µs 10 4
tAR
Page 7
0
20 40 60 80 100 120 °C 160
Tj
2004-03-30
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