IXUC160N075 データシートの表示（PDF） - IXYS CORPORATION
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IXUC160N075 Datasheet PDF : 2 Pages
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IXUC160N075
Symbol
Qg(on)
Qgs
Q
gd
td(on)
tr
td(off)
t
f
R
thJC
RthCH
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 10 V, VDS = 0.5 VDSS, ID = 100 A
VGS = 10 V, VDS =40 V,
ID = 90 A, RG = 4.7 Ω
250
nC
tbd
nC
tbd
nC
50
ns
40
ns
190
ns
55
ns
0.5 K/W
0.30
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VSD
IF = 80 A, VGS = 0 V
Note 3
1.1 1.5 V
trr
IF = 90 A, di/dt = -250 A/µs, VDS = 0.5 VDSS
120
ns
Note: 1. MOSFET chip capability
2. Intrinsic diode capability
3. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
ISOPLUS220 OUTLINE
Note: All terminals are solder plated.
1 - Gate
2 - Drain
3 - Source
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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