2SA0886
Power Transistors
PC Ta
6
(1)With a 100×100×2mm
Al heat sink
(2)Without heat sink
5
4
(1)
3
2
(2)
1
0
0 20 40 60 80 100 120 140 160 180 200
Ambient temperature Ta (˚C)
IC VCE
–4.0
TC=25˚C
–3.5
IB=–40mA
–35mA
–3.0
–30mA
–25mA
–2.5
–20mA
–2.0
–15mA
–1.5
–10mA
–1.0
–5mA
–0.5
0
0
–2 –4 –6 –8 –10
Collector to emitter voltage VCE (V)
VCE(sat) IC
IC/IB=10
–10
–3
–1
–0.3
–0.1
–0.03
25˚C
TC=100˚C
–25˚C
–0.01
–0.01 –0.03 –0.1 –0.3 –1 –3
Collector current IC (A)
VBE(sat) IC
IC/IB=10
–10
–3
–1
TC=–25˚C
100˚C
–0.3
25˚C
–0.1
–0.03
–0.01
–0.01 –0.03 –0.1 –0.3 –1 –3
Collector current IC (A)
1000
300
100
hFE IC
VCE=–5V
TC=100˚C
25˚C
–25˚C
30
10
3
1
–0.01 –0.03 –0.1 –0.3 –1 –3
Collector current IC (A)
fT IE
240
VCB=–5V
f=200MHz
TC=25˚C
200
160
120
80
40
0
0.01 0.03 0.1 0.3 1 3 10
Emitter current IE (A)
Cob VCB
140
IE=0
f=1MHz
TC=25˚C
120
100
80
60
40
20
0
–1
–3
–10
–30
–100
Collector to base voltage VCB (V)
VCER RBE
–60
1000
TC=25˚C
–50
300
ICEO Ta
VCE=–12V
–40
100
–30
30
–20
10
–10
3
0
0.001 0.01
0.1
1
10
Base to emitter resistance RBE (kΩ)
1
0 20 40 60 80 100 120
Ambient temperature Ta (˚C)
2