2SB1197KQLT1 データシートの表示（PDF） - Willas Electronic Corp.

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2SB1197KQLT1

Low Frequency Transistor

Willas Electronic Corp. 

WILLAS

2SB1197KxFLMTT11H2R0U-M+

Low Frequency Transistor

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V

FM1200-M+

SOD-123+ PACKAGE

Pb Free Product

Features

•

Batch

better

process

reverse

ldeeaskiaggne, ecxucrerellnetnat npdowtheerrdmisasl irpeastiisotSnanoOcffeeT.rs-23

• Low profile surface mounted application in order to

optimize board space.

• Low power loss, high efficiency.

• High current capability, low forward voltage drop.

• High surge capability.

.122(3.10)

• Guardring for overvoltage protection.

• Ultra high-speed switching.

.106(2.70)

• Silicon epitaxial planar chip, metal silicon junction.

• Lead-free parts meet environmental standards of

MIL-STD-19500 /228

• RoHS product for packing code suffix "G"

Halogen free product for packing code suffix "H"

Mechanical data

• Epoxy : UL94-V0 rated flame retardant

• Case : Molded plastic, SOD-123H

,

• Terminals :Plated terminals, solderable per MIL-STD-750

Method 2026

.080(2.04)

• Polarity : Indicated by cathode band

.070(1.78)

• Mounting Position : Any

• Weight : Approximated 0.011 gram

Package outline

SOD-123H

0.146(3.7)

0.130(3.3)

0.012(0.3) Typ.

0.071(1.8)

0.056(1.4)

0.031(0.8) Typ.

0.040(1.0)

0.024(0.6)

0.031(0.8) Typ.

.008(0.20)

Dimens.i0on0s3in(i0nc.h0e8s )and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase half wave, 60Hz, resistive of inductive load.

For capacitive load, der.a0t0e 4cu(0rre.1nt0b)yM2A0%X.

RATINGS

Marking Code

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U

12

13

14

15

16

VRRM

20

30

40

50

60

18

10

115 120

80

100

150

200 Vo

.0V2RM0S(0.501)4

21

28

35

42

56

70

105

140 Vo

.0V1D2C(0.302)0

30

40

50

60

80

100

150

200 Vo

IO

1.0

Am

Peak Forward

superimposed

Surge Current 8.3 ms single half

on rated load (JEDEC method)

sine-wave

Dimen

sIiFoSMn

s

in

inches

and

(millimeters)

30

Am

Typical Thermal Resistance (Note 2)

RΘJA

40

℃

Typical Junction Capacitance (Note 1)

CJ

120

P

Operating Temperature Range

TJ

-55 to +125

-55 to +150

℃

Storage Temperature Range

TSTG

- 65 to +175

℃

CHARACTERISTICS

Maximum Forward Voltage at 1.0A DC

0.037

0.95

Maximum Average Reverse Current at @T A=25℃

Rated DC Blocking Voltage

@T A=125℃

0.037

SYMBOL FM120-MH FM130-MH 0F.M95140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN

VF

0.50

0.70

0.85

0.9

0.92 Vo

IR

0.5

mA

10

NOTES:

1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.

2- Thermal Resistance From Junction to Ambient

0.035

0.9

0.079

2.0

0.031

0.8

inches

mm

2012-06

2012-

WILLAS ELECTRONIC CORP.

WILLAS ELECTRONIC CORP.

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