2SC4102W データシートの表示（PDF） - Galaxy Semi-Conductor

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2SC4102W

Silicon Epitaxial Planar Transistor

Galaxy Semi-Conductor 

BL Galaxy Electrical

Production specification

Silicon Epitaxial Planar Transistor

2SC4102W

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=50μA,IE=0

Collector-emitter breakdown

voltage

V(BR)CEO IC=1mA,IB=0

Emitter-base breakdown voltage V(BR)EBO IE=50μA,IC=0

Collector cut-off current

ICBO

VCB=100V,IE=0

120

V

120

V

5

V

0.5 μA

Emitter cut-off current

IEBO

VEB=4V,IC=0

0.5 μA

DC current gain

hFE

Collector-emitter saturation

voltage

VCE(sat)

Transition frequency

fT

Collector output capacitance

Cob

CLASSIFICATION OF hFE

Rank

Range

Marking

VCE=6V,IC=2mA

180

560

ICE=10mA,IB=1mA

VCE=12V, IC= 2mA,f=100MHz

VCB=12V,IE=0,f=1MHz

0.5

140

2.5

R

180-390

TR

S

270-560

TS

V

MHz

pF

Document number: BL/SSSTF037

Rev.A

www.galaxycn.com

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