2SD1511 データシートの表示（PDF） - Panasonic Corporation
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2SD1511 Datasheet PDF : 3 Pages
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Transistors
2SD1511
Silicon NPN epitaxial planar type darlington
For low-frequency output amplification
■ Features
• Forward current transfer ratio hFE is designed high, which is appro-
priate to the driver circuit of motors and printer hammer: hFE = 4 000
to 20 000.
• A shunt resistor is omitted from the driver.
• Mini power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
100
V
Collector-emitter voltage (Base open) VCEO
80
V
Emitter-base voltage (Collector open) VEBO
5
V
Collector current
IC
1
A
Peak collector current
ICP
1.5
A
Collector power dissipation *
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
4.5±0.1
1.6±0.2
1
0.4±0.08
1.5±0.1
23
0.5±0.08
3˚
3.0±0.15
Marking Symbol: P
Internal Connection
B
Unit: mm
1.5±0.1
0.4±0.04
45˚
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
C
■ Electrical Characteristics Ta = 25°C ± 3°C
≈ 200 Ω E
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *1, 2
Collector-emitter saturation voltage *1
Base-emitter saturation voltage *1
Transition frequency
VCBO
VCEO
VEBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
IC = 100 µA, IE = 0
IC = 1 mA, IB = 0
IE = 100 µA, IC = 0
VCB = 25 V, IE = 0
VEB = 4 V, IC = 0
VCE = 10 V, IC = 1 A
IC = 1 A, IB = 1 mA
IC = 1 A, IB = 1 mA
VCB = 10 V, IE = −50 mA, f = 200 MHz
100
80
5
4 000
100
100
40 000
1.8
2.2
150
V
V
V
nA
nA
V
V
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
hFE
4 000 to 10 000 8 000 to 20 000 16 000 to 40 000
Publication date: November 2002
SJC00225CED
1
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