2SD1306NETL-H データシートの表示（PDF） - Renesas Electronics

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2SD1306NETL-H

Silicon NPN Epitaxial

Renesas Electronics 

2SD1306

Preliminary

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min Typ Max Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

30

—

—

V IC = 10 μA, IE = 0

Collector to emitter breakdown voltage V(BR)CEO

15

—

—

V IC = 1 mA, RBE = ∞

Emitter to base breakdown voltage

V(BR)EBO

5

—

—

V IE = 10 μA, IC = 0

Collector cutoff current

DC current transfer ratio

Base to emitter voltage

Collector to emitter saturation voltage

Gain bandwidth product

ICBO

hFE*1

VBE

VCE(sat)

fT

—

—

1.0

μA VCB = 20 V, IE = 0

250

—

800

VCE = 1 V, IC = 150 mA*2

—

—

1.0

V VCE = 1 V, IC = 150 mA*2

—

—

0.5

V IC = 500 mA, IB = 50 mA*2

—

250

—

MHz VCE = 1 V, IC = 150 mA*2

Notes: 1. The 2SD1306 is grouped by hFE as follows.

2. Pulse test

Grade

D

E

Mark

ND

NE

hFE

250 to 500 400 to 800

R07DS0280EJ0300 Rev.3.00

Mar 28, 2011

Page 2 of 5

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